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MMDF2C03HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMDF2C03HDR2G
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6099
- Description: MMDF2C03HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMDF2C03HD |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 70m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 24V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A 3A |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Rise Time | 18ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 194 ns |
| Turn-Off Delay Time | 81 ns |
| Continuous Drain Current (ID) | 4.1A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.07Ohm |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MMDF2C03HDR2G Description
These tiny surface-mount MOSFETs have full logic-level performance and an extremely low RDS(on). The drain-to-source diode has a very fast reverse recovery time, and they can sustain tremendous energy in the avalanche and commutation modes. Power efficiency is a key consideration when using these devices in low voltage, high speed switching applications. Dc-dc converters and power management are typical uses in portable and battery-powered items including computers, printers, cellular and cordless phones. Additionally, they can be utilized to control low voltage motors in mass storage items like disk drives and tape drives. In designs where inductive loads are switched, the avalanche energy is defined to remove any uncertainty and provide additional protection against unforeseen voltage transients.
MMDF2C03HDR2G Features
? Longer Battery Life and Higher Efficiency with Ultra Low RDS(on)
? Logic ICs Can Drive the Logic Level Gate Drive
? Saves Board Space with Miniature SO-8 Surface Mount Package
? Bridge Circuit Use of Diodes Is Typical
? Diode Demonstrates Fast, Soft Recovery
? At Elevated Temperature, IDSS is Specified
? Specified Avalanche Energy
? Provided Mounting Instructions for SO-8 Package
? This device is lead-free.
MMDF2C03HDR2G Applications
Switching applications
