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MMBTA93LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBTA93LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9158
- Description: MMBTA93LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -200V |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -500mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 30mA 10V |
| Current - Collector Cutoff (Max) | 250nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 200V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Base Voltage (VCBO) | -200V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MMBTA93LT1G Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.As a result, the part has a transition frequency of 50MHz.The maximum collector current is 500mA volts.
MMBTA93LT1G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA93LT1G Applications
There are a lot of ON Semiconductor MMBTA93LT1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
