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MMBTA64 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBTA64
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3759
- Description: MMBTA64 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23 |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 350mW |
| Current Rating | -1.2A |
| Base Part Number | MMBTA64 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Power - Max | 350mW |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 1.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 1.2A |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 30V |
| Frequency - Transition | 125MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20000 |
| Height | 930μm |
| Length | 2.92mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MMBTA64 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.The base voltage of the emitter can be kept at 10V to achieve high efficiency.The current rating of this fuse is -1.2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Breakdown input voltage is 30V volts.Product package SOT-23 comes from the supplier.The device has a 30V maximal voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1.2A volts.
MMBTA64 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -1.2A
the supplier device package of SOT-23
MMBTA64 Applications
There are a lot of ON Semiconductor MMBTA64 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
