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MMBTA56LT1HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-MMBTA56LT1HTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9787
- Description: MMBTA56LT1HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23-3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 330mW |
| Current Rating | -800mA |
| Frequency | 100MHz |
| Base Part Number | MMBTA |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 330mW |
| Power - Max | 330mW |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 80V |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 500mA |
| Max Breakdown Voltage | 80V |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 4V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBTA56LT1HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).Breakdown input voltage is 80V volts.Product comes in the supplier's device package SOT-23-3.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 500mA volts.
MMBTA56LT1HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -800mA
the supplier device package of SOT-23-3
MMBTA56LT1HTSA1 Applications
There are a lot of Infineon Technologies MMBTA56LT1HTSA1 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
