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MMBTA55LT3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi
- Manufacturer: Rochester Electronics
- NO: 699-MMBTA55LT3
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2497
- Description: MMBTA55LT3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 225mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| JEDEC-95 Code | TO-236AB |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 500mA |
| Transition Frequency | 50MHz |
| Frequency - Transition | 50MHz |
| RoHS Status | Non-RoHS Compliant |
MMBTA55LT3 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.The part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MMBTA55LT3 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MMBTA55LT3 Applications
There are a lot of Rochester Electronics, LLC MMBTA55LT3 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
