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MMBTA14 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBTA14
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3919
- Description: MMBTA14 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 39 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23-3 |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 350mW |
| Current Rating | 1.2A |
| Base Part Number | MMBTA14 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Power - Max | 350mW |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 1.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 1.2A |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 30V |
| Frequency - Transition | 125MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20000 |
| Height | 930μm |
| Length | 2.92mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MMBTA14 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 10V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.2A.A breakdown input voltage of 30V volts can be used.The product comes in the supplier device package of SOT-23-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.When collector current reaches its maximum, it can reach 1.2A volts.
MMBTA14 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3
MMBTA14 Applications
There are a lot of ON Semiconductor MMBTA14 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
