Products
Manufacturer
RFQ
NEWS
ContactMMBT6589T1G
MMBT6589T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT6589T1G
- Package: SOT-23-6
- Datasheet:
- Stock: 4985
- Description: MMBT6589T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 540mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Current Rating | -1A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 650mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 30V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MMBT6589T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.There is a transition frequency of 100MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MMBT6589T1G Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
MMBT6589T1G Applications
There are a lot of ON Semiconductor MMBT6589T1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
