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MMBT6589T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi
- Manufacturer: Rochester Electronics
- NO: 699-MMBT6589T1G
- Package: SOT-23-6
- Datasheet:
- Stock: 6696
- Description: MMBT6589T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | MATTE TIN |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 540mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 200mA, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| RoHS Status | ROHS3 Compliant |
MMBT6589T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.When VCE saturation is 650mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
MMBT6589T1G Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 650mV @ 200mA, 2A
a transition frequency of 100MHz
MMBT6589T1G Applications
There are a lot of Rochester Electronics, LLC MMBT6589T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
