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MMBT6429LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT6429LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 4299
- Description: MMBT6429LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Length | 3.04mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Current Rating | 200mA |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| REACH SVHC | No SVHC |
| Frequency | 700MHz |
| Height | 1.01mm |
| Width | 1.4mm |
| Mounting Type | Surface Mount |
| Weight | 4.535924g |
| Operating Temperature | -55°C~150°C TJ |
| Voltage - Rated DC | 45V |
| JESD-609 Code | e3 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMBT6429 |
| Pin Count | 3 |
| Surface Mount | YES |
| Subcategory | Other Transistors |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 700MHz |
| Polarity/Channel Type | NPN |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | NPN |
| Transition Frequency | 100MHz |
| Current - Collector Cutoff (Max) | 100nA |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Base Voltage (VCBO) | 55V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 500 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100μA 5V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Pbfree Code | yes |
| Part Status | Active |
Product Description:
The MMBT6429LT1G is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of electronic applications. This small-signal transistor offers reliable amplification and switching capabilities, making it suitable for various signal processing and control tasks.
Features:
NPN Bipolar Junction Transistor: The MMBT6429LT1G is an NPN-type transistor, which means it is used for signal amplification and switching where the output is a current flowing from the collector to the emitter.
High Current Gain (hFE): This transistor has a high current gain, making it efficient for applications where small base currents lead to significant collector currents.
Low Saturation Voltage: The low saturation voltage of the MMBT6429LT1G reduces power losses when the transistor is in the on-state, enhancing energy efficiency.
SOT-23 Package: The transistor is available in the SOT-23 surface-mount package, which is compact and suitable for space-constrained applications.
RoHS Compliant: The MMBT6429LT1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness.
Applications:
Signal Amplification: The MMBT6429LT1G can be used to amplify weak signals in various electronic systems, such as audio amplifiers, sensor interfaces, and communication circuits.
Switching Circuits: The transistor's switching capabilities make it useful in digital logic circuits, where it can act as a switch to control other components.
Voltage Regulation: It can be used in voltage regulation circuits to stabilize output voltages in power supplies.
Oscillator Circuits: The transistor can be part of oscillator circuits that generate waveform signals for various applications.
Sensor Interfaces: It is suitable for interfacing sensors to microcontrollers or other processing circuits due to its amplification capabilities.
Audio Amplification: The MMBT6429LT1G can amplify audio signals in audio amplifiers, pre-amplifiers, and equalizers.
Current Regulation: It can be used in current source circuits to provide stable current output to other components.
Voltage Controlled Oscillators (VCOs): In radio frequency applications, the transistor can be part of VCO circuits used in tuning and modulation.
Feedback Loops: The transistor can be used in feedback loops to control system parameters in various electronic systems.
Logic-Level Shifting: It can be used to shift logic levels in digital circuits.
In summary, the MMBT6429LT1G NPN transistor is a versatile component suitable for various signal amplification, switching, and control applications. Whether you're designing signal amplifiers, switching circuits, voltage regulators, or sensor interfaces, this transistor provides reliable performance and contributes to the functionality and efficiency of your electronic systems.
