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MMBT5962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT5962
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8371
- Description: MMBT5962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 39 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 22 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 100mA |
| Base Part Number | MMBT5962 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 2nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 45V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 600 |
| Height | 930μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBT5962 PNP Amplifier Description
Because the MMBT5962 is an NPN transistor, the collector and emitter are open (reverse biased) while the base pin is maintained at the ground and closed (forward-biased) when a signal is applied to the base pin. MMBT5962 has a gain value of 900 (usually), with a maximum of 1200. This number influences the amplification capacity, which with this transistor is quite high.
MMBT5962 PNP Amplifier Features
Higher gain value
Low noise
Pb free device
Low current (max. 100nA)
Low voltage (max. 30V)
Collector-Emitter Voltage: 30 Vdc
Collector-Base Voltage: 35 Vdc
Emitter-Base Voltage: 3.0 Vdc
DC current gain: 1200 hFe (max.)
Operating and Junction Temperature: –55 to +150 °C
MMBT5962 PNP Amplifier Applications
Low Noise Audio Amplifications
High Gain Studios
Switches
Darlington Pairs
Optical Fiber Communications
