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MMBT5551LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT5551LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2317
- Description: MMBT5551LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | 160V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 600mA |
| Base Part Number | MMBT5551 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 225mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 80 |
| Max Junction Temperature (Tj) | 150°C |
| VCEsat-Max | 0.2 V |
| Height | 1.11mm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBT5551LT1G Description
The MMBT5551LT1G is an NPN Silicon High Voltage Transistor developed for applications that require specific site and control changes. According to the MMBT5551LT1G datasheet, this transistor is PPAP capable and AEC-Q101 qualified. The NPN Bipolar High Voltage Transistor is intended for general-purpose switching applications. The MMBT5551LT1G is packaged in a SOT-23 package, which is also intended for low-power surface mount applications.
MMBT5551LT1G Features
Pb?Free Devices are available
Collector-Emitter Breakdown Voltage 160 V
Miniature SOT-23 Surface Mount Package Saves Board Space>
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
MMBT5551LT1G Applications
Industrial
Automotive
Switching applications
Lower power surface mount applications
