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MMBT5550LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT5550LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1734
- Description: MMBT5550LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Type | General Purpose |
| Voltage - Rated DC | 140V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 600mA |
| Base Part Number | MMBT5550 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 225mW |
| Transistor Application | SWITCHING |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 140V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 140V |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 60 |
| VCEsat-Max | 0.25 V |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBT5550LT1G Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 6V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a breakdown input voltage of 140V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT5550LT1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
MMBT5550LT1G Applications
There are a lot of ON Semiconductor MMBT5550LT1G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
