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MMBT5089 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT5089
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5640
- Description: MMBT5089 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Height | 1.2mm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 39 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 20 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23 |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 350mW |
| Current Rating | 100mA |
| Frequency | 50MHz |
| Base Part Number | MMBT5089 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Power - Max | 350mW |
| Gain Bandwidth Product | 50MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100μA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 25V |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 100mA |
| Max Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 25V |
| Frequency - Transition | 50MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 4.5V |
| hFE Min | 400 |
| Max Junction Temperature (Tj) | 150°C |
The MMBT5089 is a Bipolar Transistors - BJT in 3 pin SOT-23 package. This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA. NPN is its transistor polarity. Collector- Emitter Voltage VCEO Max is 25v. Collector- Base Voltage VCBO is 30v. MMBT5089 recommended operating temperature is from -55 to 150℃.
MMBT5089 Features
Collector-Emitter Voltage: 25 V
Collector-Base Voltage: 30 V
Emitter-Base Voltage: 3 V
Collector Current: 0.05 A
Collector Dissipation: 0.35 W
DC Current Gain (hfe): 400 to 1200
Transition Frequency: 50 MHz
Noise Figure: 2 dB
Operating and Storage Junction Temperature Range: -55 to +150 °C
Package: SOT-23
These Devices are Pb-Free and are RoHS Compliant
MMBT5089 Applications
Communications equipment
Broadband fixed line access Datacom module Wired networking Wireless infrastructure
Industrial
Aerospace & defense Appliances Building automation Electronic point of sale (EPOS)Factory automation & control Grid infrastructure Industrial transport (non-car & non-light truck)Lighting Medical Motor drives Power delivery Pro audio, video & signage Test & measurement
Enterprise systems
Data center & enterprise computing Enterprise machine Enterprise projectors
