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MMBT5088 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT5088
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2352
- Description: MMBT5088 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 39 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23 |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 350mW |
| Current Rating | 50mA |
| Frequency | 50MHz |
| Base Part Number | MMBT5088 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Power - Max | 350mW |
| Gain Bandwidth Product | 50MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100μA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Current - Collector (Ic) (Max) | 100mA |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 30V |
| Frequency - Transition | 50MHz |
| Collector Base Voltage (VCBO) | 35V |
| Emitter Base Voltage (VEBO) | 4.5V |
| hFE Min | 300 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBT5088 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100μA 5V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 4.5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.Single BJT transistor can take a breakdown input voltage of 30V volts.Product comes in SOT-23 supplier package.This device displays a 30V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below 100mA volts.
MMBT5088 Features
the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
the supplier device package of SOT-23
MMBT5088 Applications
There are a lot of ON Semiconductor MMBT5088 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
