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MMBT4403WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT4403WT1G
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 8352
- Description: MMBT4403WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 20 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -600mA |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMBT4403 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | -750mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Turn Off Time-Max (toff) | 255ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBT4403WT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -750mV.A VCE saturation (Max) of 750mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 200MHz.As a result, it can handle voltages as low as 40V volts.Maximum collector currents can be below 600mA volts.
MMBT4403WT1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403WT1G Applications
There are a lot of ON Semiconductor MMBT4403WT1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
