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MMBT4403LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT4403LT3G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 724
- Description: MMBT4403LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 600mA |
| Frequency | 200MHz |
| Base Part Number | MMBT4403 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | -750mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Turn Off Time-Max (toff) | 255ns |
| Collector-Base Capacitance-Max | 8.5pF |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 2.64mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBT4403LT3G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -750mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 200MHz.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT4403LT3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 200MHz
MMBT4403LT3G Applications
There are a lot of ON Semiconductor MMBT4403LT3G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
