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MMBT4126LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT4126LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 791
- Description: MMBT4126LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Frequency | 250MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMBT4126 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Power - Max | 225mW |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 25V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 120 |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 2.64mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -200mA |
MMBT4126LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 250MHz in the part.An input voltage of 25V volts is the breakdown voltage.A maximum collector current of 200mA volts can be achieved.
MMBT4126LT1G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT4126LT1G Applications
There are a lot of ON Semiconductor MMBT4126LT1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
