MMBT3906LP-7B

MMBT3906LP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-MMBT3906LP-7B
  • Package: 3-UFDFN
  • Datasheet: pdf
  • Stock: 1919
  • Description: MMBT3906LP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 250mW
Terminal Position BOTTOM
Base Part Number MMBT3906
Pin Count 3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 250mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -200mA
VCEsat-Max 0.4 V
Turn On Time-Max (ton) 70ns
Collector-Base Capacitance-Max 4.5pF
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBT3906LP-7B Overview


This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.300MHz is present in the transition frequency.As a result, it can handle voltages as low as 40V volts.A maximum collector current of 200mA volts can be achieved.

MMBT3906LP-7B Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz

MMBT3906LP-7B Applications


There are a lot of Diodes Incorporated MMBT3906LP-7B applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

In Stock

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