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MMBT3906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT3906
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 9660
- Description: MMBT3906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 31 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23-3 |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 350mW |
| Current Rating | -200mA |
| Frequency | 250MHz |
| Base Part Number | MMBT3906 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Power - Max | 350mW |
| Gain Bandwidth Product | 250MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -40V |
| Max Collector Current | -200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 40V |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 200mA |
| Max Frequency | 250MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Max Breakdown Voltage | 40V |
| Frequency - Transition | 250MHz |
| Collector Base Voltage (VCBO) | -40V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 30 |
| Height | 1.2mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
MMBT3906 Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -400mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.The emitter base voltage can be kept at -5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -200mA.There is a breakdown input voltage of 40V volts that it can take.Single BJT transistor comes in a supplier device package of SOT-23-3.There is a 40V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of -200mA volts can be achieved.
MMBT3906 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
the supplier device package of SOT-23-3
MMBT3906 Applications
There are a lot of ON Semiconductor MMBT3906 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
