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MMBT3904T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT3904T
- Package: SC-89, SOT-490
- Datasheet:
- Stock: 4166
- Description: MMBT3904T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | LIFETIME (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-523F |
| Weight | 30mg |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Frequency | 300MHz |
| Base Part Number | MMBT3904 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Power - Max | 250mW |
| Gain Bandwidth Product | 300MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 40V |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 200mA |
| Max Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Max Breakdown Voltage | 40V |
| Frequency - Transition | 300MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Height | 780μm |
| Length | 1.7mm |
| Width | 980μm |
MMBT3904T Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.There is a breakdown input voltage of 40V volts that it can take.Supplier package SOT-523F contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.The maximum collector current is 200mA volts.
MMBT3904T Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F
MMBT3904T Applications
There are a lot of ON Semiconductor MMBT3904T applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
