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MMBT3904LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT3904LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3595
- Description: MMBT3904LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Type | General Purpose |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMBT3904 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 225mW |
| Gain Bandwidth Product | 300MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Max Junction Temperature (Tj) | 150°C |
| Turn Off Time-Max (toff) | 250ns |
| Turn On Time-Max (ton) | 70ns |
| Height | 1.11mm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBT3904LT1G Description
The NPN transistor MMBT3904LT1G is usually a bipolar transistor with a three-layer structure, which is used for signal amplification. It is a device controlled by current. The negative-positive-negative transistor is denoted by the abbreviation NPN.
MMBT3904LT1G Features
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
? Compliant
? S Prefix for Automotive and Other Applications Requiring Unique
? Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
MMBT3904LT1G Applications
?Automotive
?Applications Requiring Unique Site and Control Change Requirements
