MMBT3904LP-7B

MMBT3904LP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-MMBT3904LP-7B
  • Package: 3-UFDFN
  • Datasheet: pdf
  • Stock: 5473
  • Description: MMBT3904LP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 250mW
Terminal Position BOTTOM
Base Part Number MMBT3904
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Max Frequency 100MHz
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Collector-Base Capacitance-Max 4pF
Height 500μm
Length 1mm
Width 600μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBT3904LP-7B Overview


DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.A constant collector voltage of 200mA is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 200mA volts at its maximum.

MMBT3904LP-7B Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT3904LP-7B Applications


There are a lot of Diodes Incorporated MMBT3904LP-7B applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

In Stock

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