MMBT3904,215

MMBT3904,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-MMBT3904,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 7596
  • Description: MMBT3904,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 200mV
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Height 1.1mm
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT3904
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA

MMBT3904,215 Overview


DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The part has a transition frequency of 300MHz.When collector current reaches its maximum, it can reach 200mA volts.

MMBT3904,215 Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT3904,215 Applications


There are a lot of Nexperia USA Inc. MMBT3904,215 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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