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MMBT2907A-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi
- Manufacturer: Comchip Technology
- NO: 186-MMBT2907A-G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 4951
- Description: MMBT2907A-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Weight | 1.437803g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 250mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Current - Collector (Ic) (Max) | 600mA |
| Transition Frequency | 200MHz |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Continuous Collector Current | -600mA |
| Turn Off Time-Max (toff) | 285ns |
| Turn On Time-Max (ton) | 35ns |
| RoHS Status | ROHS3 Compliant |
MMBT2907A-G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -600mA in order to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.A maximum collector current of 600mA volts is possible.
MMBT2907A-G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
MMBT2907A-G Applications
There are a lot of Comchip Technology MMBT2907A-G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
