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MMBT2907A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT2907A
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5232
- Description: MMBT2907A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23 |
| Weight | 59.987591mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 350mW |
| Current Rating | -800mA |
| Frequency | 200MHz |
| Base Part Number | MMBT2907 |
| Number of Elements | 1 |
| Polarity | PNP |
| Voltage | 60V |
| Element Configuration | Single |
| Current | 6A |
| Power Dissipation | 350mW |
| Power - Max | 350mW |
| Gain Bandwidth Product | 200MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -60V |
| Max Collector Current | -800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 800mA |
| Max Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1.6V |
| Max Breakdown Voltage | 60V |
| Frequency - Transition | 200MHz |
| Collector Base Voltage (VCBO) | -60V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 50 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.2mm |
| Length | 6.35mm |
| Width | 6.35mm |
MMBT2907A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.The collector emitter saturation voltage is 1.6V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).Breakdown input voltage is 60V volts.Product comes in the supplier's device package SOT-23.This device displays a 60V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below -800mA volts.
MMBT2907A Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
the supplier device package of SOT-23
MMBT2907A Applications
There are a lot of ON Semiconductor MMBT2907A applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
