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MMBT2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT2369A
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 4188
- Description: MMBT2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 39 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH SPEED SATURATED SWITCHING |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MMBT2369 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 225mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 400nA ICBO |
| JEDEC-95 Code | TO-236AB |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Current - Collector (Ic) (Max) | 200mA |
| Transition Frequency | 500MHz |
| Power Dissipation-Max (Abs) | 0.35W |
| Turn Off Time-Max (toff) | 18ns |
| Turn On Time-Max (ton) | 12ns |
MMBT2369A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Collector Emitter Breakdown occurs at 15VV - Maximum voltage.
MMBT2369A Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
a transition frequency of 500MHz
MMBT2369A Applications
There are a lot of ON Semiconductor MMBT2369A applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
