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MMBT2222LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBT2222LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8822
- Description: MMBT2222LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 600mA |
| Frequency | 250MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMBT2222 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 1.6V |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Turn Off Time-Max (toff) | 285ns |
| Height | 1.11mm |
| Length | 3.04mm |
| Width | 2.64mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
MMBT2222LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.250MHz is present in the transition frequency.As a result, it can handle voltages as low as 30V volts.Maximum collector currents can be below 600mA volts.
MMBT2222LT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT2222LT1G Applications
There are a lot of ON Semiconductor MMBT2222LT1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
