MMBT2222ALP4-7B

MMBT2222ALP4-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-MMBT2222ALP4-7B
  • Package: 3-XFDFN
  • Datasheet: pdf
  • Stock: 7612
  • Description: MMBT2222ALP4-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier MMBT2222ALP4-7B
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT2222A
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 460mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Max Frequency 300MHz
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 600mA
Turn Off Time-Max (toff) 285ns
Height 350μm
Length 1.05mm
Width 650μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBT2222ALP4-7B Overview


DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of 600mA should be maintained to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.In the part, the transition frequency is 300MHz.Single BJT transistor can be broken down at a voltage of 40V volts.The maximum collector current is 600mA volts.

MMBT2222ALP4-7B Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT2222ALP4-7B Applications


There are a lot of Diodes Incorporated MMBT2222ALP4-7B applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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