MMBT2222A

MMBT2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-MMBT2222A
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 3412
  • Description: MMBT2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 142 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 59.987591mg
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation 300mW
Current Rating 500mA
Frequency 300MHz
Base Part Number MMBT2222
Number of Elements 1
Polarity NPN
Voltage 40V
Element Configuration Single
Current 6A
Power Dissipation 350mW
Power - Max 350mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1A
Max Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free

MMBT2222A Description


MMBT2222A is a type of small signal NPN transistor that is manufactured by ON Semiconductor for current amplification and switching. It can turn a weak electrical signal into a signal of a certain strength. Of course, this conversion still follows energy conservation, and it just converts the energy of the power supply into the energy of the signal. Its PNP complementary type is MMBT2907A.



MMBT2222A Features


  • Silicon epitaxial planar NPN transistor

  • Available in the SOT-23 package

  • Operating junction temperature of 150 °C

  • PNP complementary type of MMBT2907A



MMBT2222A Applications


  • Portable equipment

  • Small load switch transistor with high gain and low saturation voltage


In Stock

Please send RFQ , we will respond immediately.