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MMBF5485 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBF5485
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3206
- Description: MMBF5485 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 42 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 10mA |
| Frequency | 400MHz |
| Base Part Number | MMBF5485 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 225mW |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 25V |
| Transistor Type | N-Channel JFET |
| Continuous Drain Current (ID) | 10mA |
| Gate to Source Voltage (Vgs) | -25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Noise Figure | 4dB |
| Voltage - Test | 15V |
| Feedback Cap-Max (Crss) | 1 pF |
| Height | 930μm |
| Length | 2.92mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBF5485 Description
RF power transistors with duty cycles between 1% and 12% that operate between 1200 MHz and 1400 MHz. These devices work well for pulsed applications. This development aims to improve switching performance, dv/dt rate, conduction loss, and avalanche energy. This item can be applied in a variety of circumstances and is meant for general use.
MMBF5485 Features
These assume a junction temperature of no more than 150 °C.
These limitations are true in a steady state. Consult ON Semiconductor before employing pulsed or low duty-cycle activities.
MMBF5485 Applications
Switching applications
