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MMBD717LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBD717LT1G
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 4140
- Description: MMBD717LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Capacitance | 2.5pF |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMBD717 |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Common Anode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1μA @ 10V |
| Power Dissipation | 200mW |
| Voltage - Forward (Vf) (Max) @ If | 370mV @ 1mA |
| Forward Current | 1mA |
| Max Reverse Leakage Current | 1μA |
| Operating Temperature - Junction | -55°C~150°C |
| Halogen Free | Halogen Free |
| Forward Voltage | 370mV |
| Max Reverse Voltage (DC) | 20V |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 20V |
| Diode Configuration | 1 Pair Common Anode |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBD717LT1G Overview
As long as the forward voltage is set to 370mV, the device will operate.In this case, the forward voltage has to be set at 1mA to operate the device.There can be a current drawn from this part of 100mA.Approximately 2.5pF farads of capacitance are found in this device.Array is powered by a reverse voltage peak of 1μA.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.Electronic and electrical devices create heat (energy loss) as a result of their primary functions.
MMBD717LT1G Features
370mV forward voltage
2.5pF farads
a peak voltage of 1μA
a reverse voltage peak of 1μA
MMBD717LT1G Applications
There are a lot of ON Semiconductor MMBD717LT1G applications of rectifier diode array.
- Rectifier for drives applications
- Rectifiers in switch mode power supplies (SMPS)
- General Rectification
- Free wheeling diode in low voltage converters
- Rectifiers for UBS
- Crowbar applications
- Battery chargers
