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MMBD6100LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBD6100LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 3308
- Description: MMBD6100LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 70V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMBD6100 |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 50V |
| Power Dissipation | 300mW |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 100mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 100nA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 500mA |
| Output Current-Max | 0.2A |
| Halogen Free | Halogen Free |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1.1V |
| Max Reverse Voltage (DC) | 70V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 4 ns |
| Peak Reverse Current | 100nA |
| Max Repetitive Reverse Voltage (Vrrm) | 70V |
| Peak Non-Repetitive Surge Current | 500mA |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 500mA |
| Recovery Time | 4 ns |
| Height | 1.016mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MMBD6100LT1G Overview
In the case of 1.1V forward voltage, the device will operate.Array is capable of supporting a maximum output voltage of 0.2A.Monarrayoring the surge current and preventing array from exceeding 500mA should be the rule.A forward voltage of 200mA will enable the device to operate.The part can draw a current of 200mA.A reverse voltage peak of 100nA is used to power devices like this one.The maximum reverse leakage current from this semiconductor is 100nA, which corresponds to the reverse leakage current from that device when reverse biased.By virtue of its primary function, this electronic or electrical device generates 300mW kcal of heat (energy loss).
MMBD6100LT1G Features
1.1V forward voltage
a maximum output voltage of 0.2A
a peak voltage of 100nA
a reverse voltage peak of 100nA
MMBD6100LT1G Applications
There are a lot of ON Semiconductor MMBD6100LT1G applications of rectifier diode array.
- Rectifiers in switch mode power supplies (SMPS)
- Battery chargers
- Rectifier for drives applications
- Free wheeling diode in low voltage converters
- Rectifiers for UBS
- Crowbar applications
- General Rectification
