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MJW21196G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJW21196G
- Package: TO-247-3
- Datasheet:
- Stock: 9181
- Description: MJW21196G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Length | 16.26mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 250V |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 16A |
| Frequency | 4MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 16A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-247AD |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.2A, 16A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| Height | 21.08mm |
MJW21196G Overview
In this device, the DC current gain is 20 @ 8A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3.2A, 16A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 4MHz in the part.During maximum operation, collector current can be as low as 16A volts.
MJW21196G Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJW21196G Applications
There are a lot of ON Semiconductor MJW21196G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
