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MJW21196 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJW21196
- Package: TO-247-3
- Datasheet:
- Stock: 6672
- Description: MJW21196 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 250V |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 16A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 16A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-247AD |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.2A, 16A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 20 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
MJW21196 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 8A 5V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.A VCE saturation (Max) of 3V @ 3.2A, 16A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 16A for this device.In this part, there is a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 16A volts.
MJW21196 Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJW21196 Applications
There are a lot of ON Semiconductor MJW21196 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
