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MJW21191G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJW21191G
- Package: TO-247-3
- Datasheet:
- Stock: 9554
- Description: MJW21191G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -150V |
| Max Power Dissipation | 125W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -4A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A 2V |
| Current - Collector Cutoff (Max) | 10μA |
| JEDEC-95 Code | TO-247AE |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
| Collector Emitter Breakdown Voltage | 150V |
| Current - Collector (Ic) (Max) | 8A |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 2V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 15 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MJW21191G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 4A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 1.6A, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.The part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 8A volts.
MJW21191G Features
the DC current gain for this device is 15 @ 4A 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 1.6A, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 4MHz
MJW21191G Applications
There are a lot of ON Semiconductor MJW21191G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
