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MJW18020G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJW18020G
- Package: TO-247-3
- Datasheet:
- Stock: 5585
- Description: MJW18020G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 450V |
| Max Power Dissipation | 250W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 20A |
| Frequency | 13MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 13MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1kV |
| Max Collector Current | 30A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 3A 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-247AD |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 4A, 20A |
| Collector Emitter Breakdown Voltage | 450V |
| Transition Frequency | 13MHz |
| Collector Emitter Saturation Voltage | 1.15V |
| Max Breakdown Voltage | 150V |
| Collector Base Voltage (VCBO) | 1kV |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 14 |
| Height | 21.08mm |
| Length | 16.26mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
MJW18020G Overview
In this device, the DC current gain is 14 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1.15V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 4A, 20A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (20A).As a result, the part has a transition frequency of 13MHz.Input voltage breakdown is available at 150V volts.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJW18020G Features
the DC current gain for this device is 14 @ 3A 5V
a collector emitter saturation voltage of 1.15V
the vce saturation(Max) is 1.5V @ 4A, 20A
the emitter base voltage is kept at 9V
the current rating of this device is 20A
a transition frequency of 13MHz
MJW18020G Applications
There are a lot of ON Semiconductor MJW18020G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
