MJW1302AG

MJW1302AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-MJW1302AG
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 7487
  • Description: MJW1302AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A 5V
Current - Collector Cutoff (Max) 50μA ICBO
JEDEC-95 Code TO-247AD
Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A
Collector Emitter Breakdown Voltage 230V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -230V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Current Rating -15A
Frequency 30MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 230V

MJW1302AG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 7A 5V.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 1A, 10A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.30MHz is present in the transition frequency.Collector current can be as low as 15A volts at its maximum.

MJW1302AG Features


the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz

MJW1302AG Applications


There are a lot of ON Semiconductor MJW1302AG applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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