MJW1302A

MJW1302A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-MJW1302A
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 1027
  • Description: MJW1302A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -230V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating -15A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A 5V
Current - Collector Cutoff (Max) 50μA ICBO
JEDEC-95 Code TO-247AD
Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A
Collector Emitter Breakdown Voltage 230V
Current - Collector (Ic) (Max) 15A
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

MJW1302A Overview


In this device, the DC current gain is 50 @ 7A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 1A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.In extreme cases, the collector current can be as low as 15A volts.

MJW1302A Features


the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz

MJW1302A Applications


There are a lot of ON Semiconductor MJW1302A applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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