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MJL3281AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJL3281AG
- Package: TO-264-3, TO-264AA
- Datasheet:
- Stock: 8772
- Description: MJL3281AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 200V |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 15A |
| Frequency | 30MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 200V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 5A 5V |
| Current - Collector Cutoff (Max) | 50μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 1A, 10A |
| Collector Emitter Breakdown Voltage | 260V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | 3V |
| Collector Base Voltage (VCBO) | 230V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 60 |
| Height | 26.4mm |
| Length | 20.3mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
MJL3281AG Overview
In this device, the DC current gain is 75 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.When VCE saturation is 3V @ 1A, 10A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Maximum collector currents can be below 15A volts.
MJL3281AG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 30MHz
MJL3281AG Applications
There are a lot of ON Semiconductor MJL3281AG applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
