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MJH11021G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJH11021G
- Package: TO-247-3
- Datasheet:
- Stock: 6817
- Description: MJH11021G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Saturation Voltage | 2.5V |
| Frequency - Transition | 3MHz |
| Collector Base Voltage (VCBO) | 250V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 15A |
| Height | 12.2mm |
| Length | 15.2mm |
| Width | 4.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -250V |
| Max Power Dissipation | 150W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -15A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 10A 5V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 150mA, 15A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 3MHz |
MJH11021G Overview
In this device, the DC current gain is 400 @ 10A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.When VCE saturation is 4V @ 150mA, 15A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 15A for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.There is a transition frequency of 3MHz in the part.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
MJH11021G Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz
MJH11021G Applications
There are a lot of ON Semiconductor MJH11021G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
