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MJH11019 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJH11019
- Package: TO-218-3
- Datasheet:
- Stock: 6608
- Description: MJH11019 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-218-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -200V |
| Max Power Dissipation | 150W |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -15A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 200V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 10A 5V |
| Current - Collector Cutoff (Max) | 1mA |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 150mA, 15A |
| Collector Emitter Breakdown Voltage | 200V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 2.5V |
| Frequency - Transition | 3MHz |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 15A |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MJH11019 Overview
This device has a DC current gain of 400 @ 10A 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.When VCE saturation is 4V @ 150mA, 15A, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 15A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
MJH11019 Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz
MJH11019 Applications
There are a lot of ON Semiconductor MJH11019 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
