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MJF31C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJF31C
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 1880
- Description: MJF31C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | UL RECOGNIZED |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 2W |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 3MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1.2V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A 4V |
| Current - Collector Cutoff (Max) | 300μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
MJF31C Overview
DC current gain in this device equals 10 @ 3A 4V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.3MHz is present in the transition frequency.A maximum collector current of 3A volts is possible.
MJF31C Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJF31C Applications
There are a lot of ON Semiconductor MJF31C applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
