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MJF18004G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJF18004G
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 775
- Description: MJF18004G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transition Frequency | 13MHz |
| Collector Emitter Saturation Voltage | 920mV |
| Collector Base Voltage (VCBO) | 1kV |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 12 |
| Isolation Voltage | 2kV |
| Height | 9.24mm |
| Length | 10.63mm |
| Width | 4.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 450V |
| Max Power Dissipation | 35W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 13MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 280mW |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 13MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 450V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 300mA 5V |
| Current - Collector Cutoff (Max) | 100μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 500mA, 2.5A |
| Collector Emitter Breakdown Voltage | 450V |
MJF18004G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 300mA 5V DC current gain.With a collector emitter saturation voltage of 920mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 500mA, 2.5A.Keeping the emitter base voltage at 9V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.As a result, the part has a transition frequency of 13MHz.Maximum collector currents can be below 5A volts.
MJF18004G Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz
MJF18004G Applications
There are a lot of ON Semiconductor MJF18004G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
