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MJE702G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE702G
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 5289
- Description: MJE702G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJE702 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V |
| Current - Collector Cutoff (Max) | 100μA |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 1MHz |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTOR |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -80V |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4A |
MJE702G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 1MHz is present in the part.Maximum collector currents can be below 4A volts.
MJE702G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz
MJE702G Applications
There are a lot of ON Semiconductor MJE702G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
