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MJE5731 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE5731
- Package: TO-220-3
- Datasheet:
- Stock: 8477
- Description: MJE5731 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 10 hours ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -350V |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 10MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA 10V |
| Current - Collector Cutoff (Max) | 1mA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 350V |
| Transition Frequency | 10MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 350V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
MJE5731 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 300mA 10V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).As a result, the part has a transition frequency of 10MHz.A maximum collector current of 1A volts is possible.
MJE5731 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJE5731 Applications
There are a lot of ON Semiconductor MJE5731 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
