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MJE4353 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE4353
- Package: TO-218-3
- Datasheet:
- Stock: 3226
- Description: MJE4353 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Current - Collector (Ic) (Max) | 16A |
| Transition Frequency | 1MHz |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 15 |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-218-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -160V |
| Max Power Dissipation | 125W |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -16A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 1MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 3.5V |
| Max Collector Current | 16A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 8A 2V |
| Current - Collector Cutoff (Max) | 750μA |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 2A, 16A |
| Collector Emitter Breakdown Voltage | 160V |
MJE4353 Overview
DC current gain in this device equals 15 @ 8A 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 3.5V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 2A, 16A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-16A).1MHz is present in the transition frequency.Collector current can be as low as 16A volts at its maximum.
MJE4353 Features
the DC current gain for this device is 15 @ 8A 2V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 2A, 16A
the emitter base voltage is kept at 7V
the current rating of this device is -16A
a transition frequency of 1MHz
MJE4353 Applications
There are a lot of ON Semiconductor MJE4353 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
