MJE3055TTU

MJE3055TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-MJE3055TTU
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 6568
  • Description: MJE3055TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Transistor Application SWITCHING
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 525V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 14.2mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 75W
Current Rating 10A
Frequency 2MHz
Base Part Number MJE3055
Number of Elements 1
Element Configuration Single
Power Dissipation 600mW
Power - Max 75W

MJE3055TTU Overview


In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 8V @ 3.3A, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.An input voltage of 60V volts is the breakdown voltage.A maximum collector current of 10A volts can be achieved.

MJE3055TTU Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz

MJE3055TTU Applications


There are a lot of ON Semiconductor MJE3055TTU applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

In Stock

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