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MJE2955TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE2955TTU
- Package: TO-220-3
- Datasheet:
- Stock: 7866
- Description: MJE2955TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 600mW |
| Current Rating | -10A |
| Frequency | 2MHz |
| Base Part Number | MJE2955 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 600mW |
| Power - Max | 75W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 2MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V |
| Current - Collector Cutoff (Max) | 700μA |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 2MHz |
| Collector Emitter Saturation Voltage | -1.1V |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | -70V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 20 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | LIFETIME (Last Updated: 2 months ago) |
MJE2955TTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -1.1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 8V @ 3.3A, 10A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -10A current rating.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.During maximum operation, collector current can be as low as 10A volts.
MJE2955TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz
MJE2955TTU Applications
There are a lot of ON Semiconductor MJE2955TTU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
