MJE270G

MJE270G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-MJE270G
  • Package: TO-225AA, TO-126-3
  • Datasheet: pdf
  • Stock: 6880
  • Description: MJE270G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.5W
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 6MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1.5W
Halogen Free Halogen Free
Gain Bandwidth Product 6MHz
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA 10V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA
Collector Emitter Breakdown Voltage 100V
Transition Frequency 6MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 500
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC

MJE270G Overview


In this device, the DC current gain is 1500 @ 120mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).As a result, the part has a transition frequency of 6MHz.A maximum collector current of 2A volts can be achieved.

MJE270G Features


the DC current gain for this device is 1500 @ 120mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 6MHz

MJE270G Applications


There are a lot of ON Semiconductor MJE270G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

In Stock

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