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MJE210TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MJE210TG
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 2030
- Description: MJE210TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -25V |
| Max Power Dissipation | 15W |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | -5A |
| Frequency | 65MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MJE210 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 15W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 65MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 65MHz |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 70 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
MJE210TG Overview
This device has a DC current gain of 45 @ 2A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Keeping the emitter base voltage at 8V allows for a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 65MHz.During maximum operation, collector current can be as low as 5A volts.
MJE210TG Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJE210TG Applications
There are a lot of ON Semiconductor MJE210TG applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
